Application of high voltage amplifier in the design and optimization of interferometer
Name of experiment:application of high voltage amplifier in the design and optimization of scanning solid cavity F-P interferometer
Purpose of experiment:optimize the scanning solid cavity F-P interferometer
Test equipment:light source, collimated beam expansion system, electro-optic crystal to be tested (including driver), 4f system and CCD, signal source, ATA-2161 high voltage amplifier, oscilloscope.
Content of experiment:in order to realize the absolute detection of atmospheric temperature in the all-sky boundary layer, that is, to accurately obtain the atmospheric Rayleigh scattering spectrum shape, a scanning solid cavity F-P interferometer was designed for reference to the F-P interference filtering technology and the electro-optical characteristics of crystals, and its filtering performance was tested and optimized.
Experimental process:the figure shows the constructed transmission Machzender interferometer optical path, which is used for hologram recording and mainly includes the following parts: light source, collimation beam expansion system, electro-optical crystal to be tested (including drive), 4f system and CCD.
system diagram for measuring the relationship between internal homogeneity and refractive index modulation
The electro-optical crystal is driven by high voltage and function generator to generate a pulse square wave signal, which is then amplified by ATA-2161 high voltage amplifier. Finally, the amplified signal is loaded onto the crystal to complete the electro-optical performance test of the crystal.
calibration of electro-optic crystal high voltage module
Result of experiment:
(1)Holograms recorded on CCD at different voltages
(2)Under different voltage fields, the corresponding refractive index of the crystal changes
The change amount of crystal phase in the phase diagram is averaged to obtain the corresponding crystal phase change amount under different voltage fields. Then, the change amount of refractive index of crystal under different voltage fields is calculated by the formula.
comparison of measured and theoretical values for phase modulation and refractive index modulation
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